Invention Grant
US08254177B2 Programming non-volatile memory with variable initial programming pulse 有权
用可变的初始编程脉冲编程非易失性存储器

Programming non-volatile memory with variable initial programming pulse
Abstract:
Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of the non-volatile storage elements to a set of target conditions using programming pulses. For at least a subset of the programming processes, a programming pulse associated with achieving an intermediate result for a respective programming process is identified, a pulse increment between programming pulses is decreased for the respective programming process while continuing the respective programming process to program non-volatile storage elements to the respective one or more targets and the identified programming pulse is used to adjust a starting programming voltage for a subsequent programming process.
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