Invention Grant
US08254177B2 Programming non-volatile memory with variable initial programming pulse
有权
用可变的初始编程脉冲编程非易失性存储器
- Patent Title: Programming non-volatile memory with variable initial programming pulse
- Patent Title (中): 用可变的初始编程脉冲编程非易失性存储器
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Application No.: US12427007Application Date: 2009-04-21
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Publication No.: US08254177B2Publication Date: 2012-08-28
- Inventor: Gerrit Jan Hemink
- Applicant: Gerrit Jan Hemink
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of the non-volatile storage elements to a set of target conditions using programming pulses. For at least a subset of the programming processes, a programming pulse associated with achieving an intermediate result for a respective programming process is identified, a pulse increment between programming pulses is decreased for the respective programming process while continuing the respective programming process to program non-volatile storage elements to the respective one or more targets and the identified programming pulse is used to adjust a starting programming voltage for a subsequent programming process.
Public/Granted literature
- US20100103733A1 PROGRAMMING NON-VOLATILE MEMORY WITH VARIABLE INITIAL PROGRAMMING PULSE Public/Granted day:2010-04-29
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