Invention Grant
US08254185B2 Semiconductor device for generating internal voltage and memory system including the semiconductor device 有权
用于产生包括半导体器件的内部电压和存储器系统的半导体器件

  • Patent Title: Semiconductor device for generating internal voltage and memory system including the semiconductor device
  • Patent Title (中): 用于产生包括半导体器件的内部电压和存储器系统的半导体器件
  • Application No.: US12700383
    Application Date: 2010-02-04
  • Publication No.: US08254185B2
    Publication Date: 2012-08-28
  • Inventor: Yong-ho Cho
  • Applicant: Yong-ho Cho
  • Applicant Address: KR Suwon-si, Gyeonggi-do
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Suwon-si, Gyeonggi-do
  • Agency: Lee & Morse, P.C.
  • Priority: KR10-2009-0008852 20090204
  • Main IPC: G11C7/06
  • IPC: G11C7/06
Semiconductor device for generating internal voltage and memory system including the semiconductor device
Abstract:
A semiconductor device includes a comparator, an internal voltage generator, a control signal generator, and a selector. The comparator may compare a reference voltage to an internal voltage and output a comparison signal. The internal voltage generator may generate and output the internal voltage in response to the comparison signal. The control signal generator may generate a control signal. The selector may receive first and second target voltages, and select and output one of the first and second target voltages as the reference voltage in response to the control signal.
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