Invention Grant
- Patent Title: (Al,Ga,In)N diode laser fabricated at reduced temperature
- Patent Title (中): （Al，Ga，In）N二极管激光器
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Application No.: US12476208Application Date: 2009-06-01
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Publication No.: US08254423B2Publication Date: 2012-08-28
- Inventor: Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
- Applicant: Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
Public/Granted literature
- US20100142576A1 (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE Public/Granted day:2010-06-10
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