Invention Grant
US08255619B2 Memory device with vertically embedded non flash non volatile memory for emulation of NAND flash memory
有权
具有垂直嵌入式非闪存非易失性存储器的存储器件,用于仿真NAND闪存
- Patent Title: Memory device with vertically embedded non flash non volatile memory for emulation of NAND flash memory
- Patent Title (中): 具有垂直嵌入式非闪存非易失性存储器的存储器件,用于仿真NAND闪存
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Application No.: US13303016Application Date: 2011-11-22
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Publication No.: US08255619B2Publication Date: 2012-08-28
- Inventor: Robert Norman
- Applicant: Robert Norman
- Applicant Address: US CA Sunnyvale Corporation
- Assignee: Unity Semiconductor Corporation
- Current Assignee: Unity Semiconductor Corporation
- Current Assignee Address: US CA Sunnyvale Corporation
- Agency: Stolowitz Ford Cowger LLP
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A system and a method for emulating a NAND memory system are disclosed. In the method, a command associated with a NAND memory is received. After receipt of the command, a vertically configured non-volatile memory array is accessed based on the command. In the system, a vertically configured non-volatile memory array is connected with an input/output controller and a memory controller. The memory controller is also connected with the input/output controller. The memory controller is operative to interface with a command associated with a NAND memory and based on the command, to access the vertically configured non-volatile memory array for a data operation, such as a read operation or write operation. An erase operation on the vertically configured non-volatile memory array is not required prior to the write operation. The vertically configured non-volatile memory array can be partitioned into planes, blocks, and sub-planes, for example.
Public/Granted literature
- US20120069665A1 Memory Device With Vertically Embedded Non Flash Non Volatile Memory For Emulation Of Nand Flash Memory Public/Granted day:2012-03-22
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