Invention Grant
US08255619B2 Memory device with vertically embedded non flash non volatile memory for emulation of NAND flash memory 有权
具有垂直嵌入式非闪存非易失性存储器的存储器件,用于仿真NAND闪存

Memory device with vertically embedded non flash non volatile memory for emulation of NAND flash memory
Abstract:
A system and a method for emulating a NAND memory system are disclosed. In the method, a command associated with a NAND memory is received. After receipt of the command, a vertically configured non-volatile memory array is accessed based on the command. In the system, a vertically configured non-volatile memory array is connected with an input/output controller and a memory controller. The memory controller is also connected with the input/output controller. The memory controller is operative to interface with a command associated with a NAND memory and based on the command, to access the vertically configured non-volatile memory array for a data operation, such as a read operation or write operation. An erase operation on the vertically configured non-volatile memory array is not required prior to the write operation. The vertically configured non-volatile memory array can be partitioned into planes, blocks, and sub-planes, for example.
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