Invention Grant
US08256077B2 Method for forming a capacitor dielectric having tetragonal phase
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用于形成具有四方相的电容器电介质的方法
- Patent Title: Method for forming a capacitor dielectric having tetragonal phase
- Patent Title (中): 用于形成具有四方相的电容器电介质的方法
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Application No.: US12815338Application Date: 2010-06-14
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Publication No.: US08256077B2Publication Date: 2012-09-04
- Inventor: Jong-Bum Park
- Applicant: Jong-Bum Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2006-0059998 20060629
- Main IPC: H01G7/00
- IPC: H01G7/00
Abstract:
A method for forming a capacitor dielectric includes depositing a tantalum oxide layer over a substrate, performing a post-treatment on the tantalum oxide layer to provide the tantalum oxide layer with a tetragonal phase, and depositing a zirconium oxide layer over the tantalum oxide layer such that the zirconium oxide layer has a tetragonal phase.
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