Invention Grant
- Patent Title: Method for manufacturing a magneto-resistance effect element
- Patent Title (中): 制造磁阻效应元件的方法
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Application No.: US12871593Application Date: 2010-08-30
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Publication No.: US08256095B2Publication Date: 2012-09-04
- Inventor: Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
- Applicant: Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2006-188710 20060707
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00

Abstract:
An example method for manufacturing a magneto-resistance effect element includes forming a free magnetization layer and forming a spacer layer. The spacer layer is formed, for example, by forming a non-magnetic first metallic layer and forming a second metallic layer on a surface of the non-magnetic first metallic layer. A first irradiating process includes irradiating, onto the second metallic layer, first ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, Kr, so as to convert the second metallic layer into an insulating layer and to form a non-magnetic metallic path penetrating through the insulating layer and containing elements of the non-magnetic first metallic layer. A second irradiating process includes irradiating second ions or plasma onto the insulating layer. A non-magnetic third metallic layer is formed on the non-magnetic metallic path.
Public/Granted literature
- US20100323104A1 METHOD FOR MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT Public/Granted day:2010-12-23
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