Invention Grant
- Patent Title: Method of using xenon ion beams to improve track width definition
- Patent Title (中): 使用氙离子束改善轨道宽度定义的方法
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Application No.: US11975265Application Date: 2007-10-18
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Publication No.: US08256096B2Publication Date: 2012-09-04
- Inventor: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
- Applicant: Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
- Applicant Address: US CA Milpitas JP Tokyo
- Assignee: Headway Technologies, Inc.,TDK Corporation
- Current Assignee: Headway Technologies, Inc.,TDK Corporation
- Current Assignee Address: US CA Milpitas JP Tokyo
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/127
- IPC: G11B5/127 ; C23F1/04

Abstract:
Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
Public/Granted literature
- US20080040915A1 Xenon ion beam to improve track width definition Public/Granted day:2008-02-21
Information query
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