Invention Grant
- Patent Title: Method for purification of semiconducting single wall nanotubes
- Patent Title (中): 半导体单壁纳米管的纯化方法
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Application No.: US13290648Application Date: 2011-11-07
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Publication No.: US08256695B2Publication Date: 2012-09-04
- Inventor: Eugene P. Marsh , Gurtej S. Sandhu
- Applicant: Eugene P. Marsh , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: B02C23/36
- IPC: B02C23/36
Abstract:
A process of forming a semiconductive carbon nanotube structure includes imposing energy on a mixture that contains metallic carbon nanotubes and semiconductive carbon nanotubes under conditions to cause the metallic carbon nanotubes to be digested or to decompose so that they may be separated away from the semiconductive carbon nanotubes.
Public/Granted literature
- US20120052662A1 METHOD FOR PURIFICATION OF SEMICONDUCTING SINGLE WALL NANOTUBES Public/Granted day:2012-03-01
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