Invention Grant
US08257609B2 Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
有权
用于蚀刻金属布线层的蚀刻剂及使用该薄膜晶体管的方法
- Patent Title: Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
- Patent Title (中): 用于蚀刻金属布线层的蚀刻剂及使用该薄膜晶体管的方法
-
Application No.: US11318506Application Date: 2005-12-28
-
Publication No.: US08257609B2Publication Date: 2012-09-04
- Inventor: Gee Sung Chae , Gyoo Chul Jo , Yong Sup Hwang
- Applicant: Gee Sung Chae , Gyoo Chul Jo , Yong Sup Hwang
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge, LLP
- Priority: KR10-2001-0077119 20011206
- Main IPC: C09K13/00
- IPC: C09K13/00

Abstract:
The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).
Public/Granted literature
- US20060105579A1 Etchant for etching metal wiring layers and method for forming thin film transistor by using the same Public/Granted day:2006-05-18
Information query