Invention Grant
US08257609B2 Etchant for etching metal wiring layers and method for forming thin film transistor by using the same 有权
用于蚀刻金属布线层的蚀刻剂及使用该薄膜晶体管的方法

Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
Abstract:
The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).
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