Invention Grant
- Patent Title: Nanostructured layer and fabrication methods
- Patent Title (中): 纳米结构层和制造方法
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Application No.: US12643565Application Date: 2009-12-21
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Publication No.: US08257788B2Publication Date: 2012-09-04
- Inventor: Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
- Applicant: Jacqueline Fidanza , Brian M. Sager , Martin R. Roscheisen , Dong Yu , Gina J. Gerritzen
- Applicant Address: US CA San Jose
- Assignee: Nanosolar, Inc.
- Current Assignee: Nanosolar, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Mueller Law Office
- Main IPC: B05D5/00
- IPC: B05D5/00

Abstract:
Nanostructured layers with 10 nm to 50 nm pores spaced 10-50 nm apart, a method for making such nanostructured layers, optoelectronic devices having such nanostructured layers and uses for such nanostructured layers are disclosed. The nanostructured layer can be formed using precursor sol, which generally includes one or more covalent metal complexes, one or more surfactants, a solvent, one or more optional condensation inhibitors, and (optionally) water. Evaporating the solvent from the precursor sol forms a surfactant-templated film. Covalently crosslinking the surfactant-templated film forms a nanostructured porous layer. Pore size is controlled, e.g., by appropriate solvent concentration, choice of surfactant, use of chelating agents, use of swelling agents or combinations of these.
Public/Granted literature
- US20100166954A1 Nanostructured Layer and Fabrication Methods Public/Granted day:2010-07-01
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