Invention Grant
- Patent Title: Film formation method in vertical batch CVD apparatus
- Patent Title (中): 立式分批CVD装置中的成膜方法
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Application No.: US12564484Application Date: 2009-09-22
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Publication No.: US08257789B2Publication Date: 2012-09-04
- Inventor: Masanobu Matsunaga , Nobutake Nodera , Kazuhide Hasebe
- Applicant: Masanobu Matsunaga , Nobutake Nodera , Kazuhide Hasebe
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-259142 20081004
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/453

Abstract:
A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.
Public/Granted literature
- US20100136260A1 FILM FORMATION METHOD IN VERTICAL BATCH CVD APPARATUS Public/Granted day:2010-06-03
Information query
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