Invention Grant
- Patent Title: Phase shift mask with enhanced resolution and method for fabricating the same
- Patent Title (中): 具有增强分辨率的相移掩模及其制造方法
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Application No.: US12633494Application Date: 2009-12-08
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Publication No.: US08257886B2Publication Date: 2012-09-04
- Inventor: Sang Jin Jo
- Applicant: Sang Jin Jo
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2009-0020242 20090310
- Main IPC: G03F1/26
- IPC: G03F1/26

Abstract:
A method for fabricating a phase shift mask includes obtaining a layout of a mask region which sets up alight transmitting region; obtaining a layout of a phase shift region placed in a border portion of the mask region by disposing a shadow core region for light-shielding in a middle portion of the mask region; forming phase shift patterns following the layout of the phase shift region on a light transmitting substrate; and forming a shadow core layer pattern which exposes a portion of the substrate corresponding to the light transmitting region between the phase shift patterns and covering and light-shielding the portion of the substrate corresponding to the shadow core region, and a mask fabricated by the method.
Public/Granted literature
- US20100233588A1 Phase Shift Mask with Enhanced Resolution and Method for Fabricating the Same Public/Granted day:2010-09-16
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