The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist on the substrate, performing a first exposure in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation. The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.