Invention Grant
- Patent Title: Testing wiring structure and method for forming the same
- Patent Title (中): 测试接线结构及其形成方法
-
Application No.: US13353847Application Date: 2012-01-19
-
Publication No.: US08257986B2Publication Date: 2012-09-04
- Inventor: Zhilong Peng
- Applicant: Zhilong Peng
- Applicant Address: CN Beijing
- Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN200810106341 20080512
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
The invention provides a method for forming a testing wiring structure of a thin film transistor (TFT) motherboard for applying signals to a plurality of signal lines in a pixel region on the motherboard and a method for forming the same. The formed testing wiring structure comprises a gate layer metallic testing wiring and a drain layer metallic testing wiring that is over and intersects the gate layer metallic testing wiring. A pixel electrode layer testing wiring is further provided over the drain layer metallic testing wiring in an intersecting region where the drain layer metallic testing wiring intersects the gate layer metallic testing wiring. The pixel electrode layer testing wiring is electrically connected to the drain layer metallic testing wiring to be a redundant testing wiring of the drain layer metallic testing wiring.
Public/Granted literature
- US20120178250A1 TESTING WIRING STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2012-07-12
Information query
IPC分类: