Invention Grant
- Patent Title: Contact for a semiconductor light emitting device
- Patent Title (中): 接触半导体发光器件
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Application No.: US13288062Application Date: 2011-11-03
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Publication No.: US08257989B2Publication Date: 2012-09-04
- Inventor: John E. Epler
- Applicant: John E. Epler
- Applicant Address: NL Eindhoven US CA San Jose
- Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company, LLC
- Current Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company, LLC
- Current Assignee Address: NL Eindhoven US CA San Jose
- Main IPC: H01L33/40
- IPC: H01L33/40
Abstract:
A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness.
Public/Granted literature
- US20120045858A1 CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2012-02-23
Information query
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