Invention Grant
- Patent Title: Hybrid silicon vertical cavity laser with in-plane coupling
- Patent Title (中): 混合硅垂直腔激光器与平面耦合
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Application No.: US12649837Application Date: 2009-12-30
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Publication No.: US08257990B2Publication Date: 2012-09-04
- Inventor: Brian R. Koch
- Applicant: Brian R. Koch
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer.
Public/Granted literature
- US20110158278A1 HYBRID SILICON VERTICAL CAVITY LASER WITH IN-PLANE COUPLING Public/Granted day:2011-06-30
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