Invention Grant
- Patent Title: Light emitting device and method of fabricating the same
- Patent Title (中): 发光元件及其制造方法
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Application No.: US12145320Application Date: 2008-06-24
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Publication No.: US08257993B2Publication Date: 2012-09-04
- Inventor: Dae Sung Kang , Hyo Kun Son
- Applicant: Dae Sung Kang , Hyo Kun Son
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0062005 20070625
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L33/08
Abstract:
Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises: a first conductive semiconductor layer; an active layer comprising an InGaN well layer and a GaN barrier layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The GaN barrier layer comprises an AlGaN layer.
Public/Granted literature
- US20080315224A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2008-12-25
Information query
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