Invention Grant
US08257994B2 Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer
有权
通过形成高浓度P型杂质扩散层制造太阳能电池的方法
- Patent Title: Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer
- Patent Title (中): 通过形成高浓度P型杂质扩散层制造太阳能电池的方法
-
Application No.: US12746811Application Date: 2008-12-08
-
Publication No.: US08257994B2Publication Date: 2012-09-04
- Inventor: Yasushi Funakoshi
- Applicant: Yasushi Funakoshi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2007-322187 20071213
- International Application: PCT/JP2008/072232 WO 20081208
- International Announcement: WO2009/075244 WO 20090618
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/302

Abstract:
The present invention provides a method for manufacturing a solar cell, including: diffusing p type impurity into at least a portion of a first surface, which is one surface of a silicon substrate, to form a high concentration p type impurity diffusion layer; and etching one of the first surface of the silicon substrate and a second surface of the silicon substrate opposite to the first surface, using as a mask at least one of the high concentration p type impurity diffusion layer and a film formed on the high concentration p type impurity diffusion layer upon forming the high concentration p type impurity diffusion layer.
Public/Granted literature
- US20100267187A1 METHOD FOR MANUFACTURING SOLAR CELL Public/Granted day:2010-10-21
Information query
IPC分类: