Invention Grant
US08257994B2 Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer 有权
通过形成高浓度P型杂质扩散层制造太阳能电池的方法

  • Patent Title: Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer
  • Patent Title (中): 通过形成高浓度P型杂质扩散层制造太阳能电池的方法
  • Application No.: US12746811
    Application Date: 2008-12-08
  • Publication No.: US08257994B2
    Publication Date: 2012-09-04
  • Inventor: Yasushi Funakoshi
  • Applicant: Yasushi Funakoshi
  • Applicant Address: JP Osaka
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka
  • Agency: Nixon & Vanderhye P.C.
  • Priority: JP2007-322187 20071213
  • International Application: PCT/JP2008/072232 WO 20081208
  • International Announcement: WO2009/075244 WO 20090618
  • Main IPC: H01L21/00
  • IPC: H01L21/00 H01L21/302
Method for manufacturing solar cell by forming a high concentration P-type impurity diffusion layer
Abstract:
The present invention provides a method for manufacturing a solar cell, including: diffusing p type impurity into at least a portion of a first surface, which is one surface of a silicon substrate, to form a high concentration p type impurity diffusion layer; and etching one of the first surface of the silicon substrate and a second surface of the silicon substrate opposite to the first surface, using as a mask at least one of the high concentration p type impurity diffusion layer and a film formed on the high concentration p type impurity diffusion layer upon forming the high concentration p type impurity diffusion layer.
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