Invention Grant
US08258001B2 Method and apparatus for forming copper indium gallium chalcogenide layers 有权
形成铜铟镓硫族化物层的方法和装置

Method and apparatus for forming copper indium gallium chalcogenide layers
Abstract:
A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.
Information query
Patent Agency Ranking
0/0