Invention Grant
- Patent Title: Method and apparatus for forming copper indium gallium chalcogenide layers
- Patent Title (中): 形成铜铟镓硫族化物层的方法和装置
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Application No.: US12259049Application Date: 2008-10-27
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Publication No.: US08258001B2Publication Date: 2012-09-04
- Inventor: Bulent M. Basol
- Applicant: Bulent M. Basol
- Applicant Address: US CA San Jose
- Assignee: SoloPower, Inc.
- Current Assignee: SoloPower, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: H01L31/0272
- IPC: H01L31/0272 ; H01L31/18

Abstract:
A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.
Public/Granted literature
- US20090117684A1 METHOD AND APPARATUS FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYERS Public/Granted day:2009-05-07
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