Invention Grant
- Patent Title: Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same
- Patent Title (中): 耐堆叠图案塌陷的相变存储器件及其制造方法
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Application No.: US12782215Application Date: 2010-05-18
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Publication No.: US08258002B2Publication Date: 2012-09-04
- Inventor: Heon Yong Chang
- Applicant: Heon Yong Chang
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0039512 20080428
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A phase change memory device resistant to stack pattern collapse is presented. The phase change memory device includes a silicon substrate, switching elements, heaters, stack patterns, bit lines and word lines. The silicon substrate has a plurality of active areas. The switching elements are connected to the active areas. The heaters are connected to the switching elements. The stack patterns are connected to the heaters. The bit lines are connected to the stack patterns. The word lines are connected to the active areas of the silicon substrate.
Public/Granted literature
- US20100227439A1 PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND A METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-09-09
Information query
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