Invention Grant
- Patent Title: Thin film transistor and method for preparing the same
- Patent Title (中): 薄膜晶体管及其制备方法
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Application No.: US12451051Application Date: 2008-04-25
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Publication No.: US08258023B2Publication Date: 2012-09-04
- Inventor: Jung-Hyoung Lee
- Applicant: Jung-Hyoung Lee
- Applicant Address: KR Seoul
- Assignee: LG Chem, Ltd.
- Current Assignee: LG Chem, Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2007-0040328 20070425
- International Application: PCT/KR2008/002376 WO 20080425
- International Announcement: WO2008/133456 WO 20081106
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.
Public/Granted literature
- US20100090215A1 THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME Public/Granted day:2010-04-15
Information query
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