Invention Grant
US08258027B2 Method for integrating SONOS non-volatile memory into a standard CMOS foundry process flow
有权
将SONOS非易失性存储器集成到标准CMOS铸造工艺流程中的方法
- Patent Title: Method for integrating SONOS non-volatile memory into a standard CMOS foundry process flow
- Patent Title (中): 将SONOS非易失性存储器集成到标准CMOS铸造工艺流程中的方法
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Application No.: US12941645Application Date: 2010-11-08
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Publication No.: US08258027B2Publication Date: 2012-09-04
- Inventor: Joseph Terence Smith , Dennis A. Adams , Patrick Bruckner Shea
- Applicant: Joseph Terence Smith , Dennis A. Adams , Patrick Bruckner Shea
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Andrews Kurth LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
An embodiment of a method is disclosed to integrate silicon oxide nitride oxide silicon (SONOS) non-volatile memory (NVM) into a conventional complementary metal oxide semiconductor (CMOS) semiconductor foundry process flow. An embodiment of the method only adds a few additional steps to a standard CMOS foundry process flow and makes minor changes to the rest of the baseline CMOS foundry process flow to form a new process module that includes both CMOS devices and an embedded SONOS NVM.
Public/Granted literature
- US20120115292A1 METHOD FOR INTEGRATING SONOS NON-VOLATILE MEMORY INTO A STANDARD CMOS FOUNDRY PROCESS FLOW Public/Granted day:2012-05-10
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