Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12951774Application Date: 2010-11-22
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Publication No.: US08258040B2Publication Date: 2012-09-04
- Inventor: Tetsuya Ito
- Applicant: Tetsuya Ito
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2007-068438 20070316
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
It is disclosed a semiconductor device including a silicon substrate, provided with a plurality of cell active regions in a call region, an element isolation groove, formed in a portion, between any two of the plurality of cell active region, of the silicon substrate, a capacitor dielectric film, formed in the element isolation groove, a capacitor upper electrode, formed on the capacitor dielectric film, and configuring a capacitor together with the silicon substrate and the capacitor dielectric film. The semiconductor device is characterized in that a dummy active region is provided next to the cell region in the silicon substrate.
Public/Granted literature
- US20110070704A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-03-24
Information query
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