Invention Grant
US08258047B2 Nanostructures, methods of depositing nanostructures and devices incorporating the same
有权
纳米结构，沉积纳米结构的方法和结合其的器件
- Patent Title: Nanostructures, methods of depositing nanostructures and devices incorporating the same
- Patent Title (中): 纳米结构，沉积纳米结构的方法和结合其的器件
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Application No.: US11633205Application Date: 2006-12-04
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Publication No.: US08258047B2Publication Date: 2012-09-04
- Inventor: Loucas Tsakalakos , Joleyn Eileen Balch
- Applicant: Loucas Tsakalakos , Joleyn Eileen Balch
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Ann M. Agosti
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method for depositing nanowires is disclosed. The method includes depositing multiple nanowires onto a surface of a liquid. The method also includes partially compressing the nanowires. The method also includes dipping a substrate into the liquid. The method further includes pulling the substrate out of the liquid at a controlled speed. The method also includes transferring the nanowires onto the substrate parallel to a direction of the pulling.
Public/Granted literature
- US20100261338A1 Nanostructures, methods of depositing nanostructures and devices incorporating the same Public/Granted day:2010-10-14
Information query
IPC分类:
