Invention Grant
- Patent Title: Semiconductor laser device and method of fabricating the same
- Patent Title (中): 半导体激光器件及其制造方法
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Application No.: US12492517Application Date: 2009-06-26
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Publication No.: US08258048B2Publication Date: 2012-09-04
- Inventor: Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
- Applicant: Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-103049 20050331
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
Public/Granted literature
- US20090262772A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-10-22
Information query
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