Invention Grant
US08258056B2 Method and material for forming a double exposure lithography pattern
有权
用于形成双曝光光刻图案的方法和材料
- Patent Title: Method and material for forming a double exposure lithography pattern
- Patent Title (中): 用于形成双曝光光刻图案的方法和材料
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Application No.: US12814172Application Date: 2010-06-11
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Publication No.: US08258056B2Publication Date: 2012-09-04
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.
Public/Granted literature
- US20110008968A1 METHOD AND MATERIAL FOR FORMING A DOUBLE EXPOSURE LITHOGRAPHY PATTERN Public/Granted day:2011-01-13
Information query
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