Invention Grant
- Patent Title: Methods of forming metal patterns in openings in semiconductor devices
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Application No.: US13411873Application Date: 2012-03-05
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Publication No.: US08258058B2Publication Date: 2012-09-04
- Inventor: Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
- Applicant: Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
- Applicant Address: KR
- Assignee: Samsung Electronic Co., Ltd.
- Current Assignee: Samsung Electronic Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2009-0018132 20090303
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer.
Public/Granted literature
- US20120164826A1 Methods of Forming Metal Patterns in Openings in Semiconductor Devices Public/Granted day:2012-06-28
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