Invention Grant
- Patent Title: Sheet structure, semiconductor device and method of growing carbon structure
- Patent Title (中): 板结构，半导体器件和生长碳结构的方法
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Application No.: US12856031Application Date: 2010-08-13
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Publication No.: US08258060B2Publication Date: 2012-09-04
- Inventor: Daiyu Kondo , Taisuke Iwai , Yoshitaka Yamaguchi , Ikuo Soga
- Applicant: Daiyu Kondo , Taisuke Iwai , Yoshitaka Yamaguchi , Ikuo Soga
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.
Public/Granted literature
- US20100327444A1 SHEET STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF GROWING CARBON STRUCTURE Public/Granted day:2010-12-30
Information query
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