Invention Grant
US08258396B2 Micro/nanostructure PN junction diode array thin-film solar cell and method for fabricating the same
有权
微/纳米结构PN结二极管阵列薄膜太阳能电池及其制造方法
- Patent Title: Micro/nanostructure PN junction diode array thin-film solar cell and method for fabricating the same
- Patent Title (中): 微/纳米结构PN结二极管阵列薄膜太阳能电池及其制造方法
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Application No.: US12318356Application Date: 2008-12-29
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Publication No.: US08258396B2Publication Date: 2012-09-04
- Inventor: Ching-Fuh Lin , Jiun-Jie Chao , Shu-Chia Shiu
- Applicant: Ching-Fuh Lin , Jiun-Jie Chao , Shu-Chia Shiu
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Rosenberg, Klein & Lee
- Priority: TW97133261A 20080829
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L35/14

Abstract:
The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.
Public/Granted literature
- US20100055824A1 Micro/nanostructure PN junction diode array thin-film solar cell and method for fabricating the same Public/Granted day:2010-03-04
Information query
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