Invention Grant
- Patent Title: Pattern measuring apparatus and pattern measuring method
- Patent Title (中): 图案测量装置和图案测量方法
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Application No.: US13136613Application Date: 2011-08-05
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Publication No.: US08258471B2Publication Date: 2012-09-04
- Inventor: Jun Matsumoto
- Applicant: Jun Matsumoto
- Applicant Address: JP Tokyo
- Assignee: Advantest Corp.
- Current Assignee: Advantest Corp.
- Current Assignee Address: JP Tokyo
- Agency: Muramatsu & Associates
- Priority: JP2010-178310 20100809
- Main IPC: H01J37/26
- IPC: H01J37/26 ; H01J37/304 ; G01N23/22

Abstract:
A pattern measurement apparatus and a pattern measurement method are capable of easily distinguishing a line pattern and a space pattern from one another, without being affected by the luminance of the pattern. The pattern measurement apparatus includes: irradiation unit for irradiating a sample with an electron beam; first electron detector and second electron detector arranged with an optical axis of the electron beam in between; image processor for generating image data of the pattern; line profile generator for generating a line profile of the pattern; and controller for causing the image processor to generate the image data of the pattern on the basis of an amount of electrons corresponding to the difference between a signal detected by the first electron detector and a signal detected by the second electron detector.
Public/Granted literature
- US20120032077A1 Pattern measuring apparatus and pattern measuring method Public/Granted day:2012-02-09
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