Invention Grant
US08258482B2 Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof
有权
使用异质结的半导体伽马辐射检测器中的能量分辨率及其使用方法及其制备
- Patent Title: Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof
- Patent Title (中): 使用异质结的半导体伽马辐射检测器中的能量分辨率及其使用方法及其制备
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Application No.: US12472081Application Date: 2009-05-26
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Publication No.: US08258482B2Publication Date: 2012-09-04
- Inventor: Rebecca J. Nikolic , Adam M. Conway , Art J. Nelson , Stephen A. Payne
- Applicant: Rebecca J. Nikolic , Adam M. Conway , Art J. Nelson , Stephen A. Payne
- Applicant Address: US CA Livermore
- Assignee: Lawrence Livermore National Security, LLC
- Current Assignee: Lawrence Livermore National Security, LLC
- Current Assignee Address: US CA Livermore
- Agent Dominic M. Kotab
- Main IPC: G01T1/24
- IPC: G01T1/24
Abstract:
In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.
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