Invention Grant
- Patent Title: Thin film transistor, display device including the same, and method of manufacturing the display device
- Patent Title (中): 薄膜晶体管，包括其的显示装置及其制造方法
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Application No.: US12390020Application Date: 2009-02-20
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Publication No.: US08258510B2Publication Date: 2012-09-04
- Inventor: Joo-Han Kim , Seung-Hwan Shim
- Applicant: Joo-Han Kim , Seung-Hwan Shim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2008-0016860 20080225
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A display device including the thin film transistor, and a method of manufacturing the display device are provided. The thin film transistor comprising a first gate electrode, a second gate electrode formed on the first gate electrode, a first semiconductor formed on the first gate electrode and including a polycrystalline semiconductor, a second semiconductor formed on the second gate electrode and including an amorphous semiconductor.
Public/Granted literature
- US20090212288A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE DISPLAY DEVICE Public/Granted day:2009-08-27
Information query
IPC分类:
