Invention Grant
US08258518B2 Flash memory device having a graded composition, high dielectric constant gate insulator
有权
具有渐变组成的闪存器件，高介电常数栅极绝缘体
- Patent Title: Flash memory device having a graded composition, high dielectric constant gate insulator
- Patent Title (中): 具有渐变组成的闪存器件，高介电常数栅极绝缘体
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Application No.: US13023609Application Date: 2011-02-09
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Publication No.: US08258518B2Publication Date: 2012-09-04
- Inventor: Leonard Forbes , Kie Y. Ahn
- Applicant: Leonard Forbes , Kie Y. Ahn
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/786
Abstract:
A graded composition, high dielectric constant gate insulator is formed between a substrate and floating gate in a flash memory cell transistor. The gate insulator comprises amorphous germanium or a graded composition of germanium carbide and silicon carbide. If the composition of the gate insulator is closer to silicon carbide near the substrate, the electron barrier for hot electron injection will be lower. If the gate insulator is closer to the silicon carbide near the floating gate, the tunnel barrier can be lower at the floating gate.
Public/Granted literature
- US20110127598A1 FLASH MEMORY DEVICE HAVING A GRADED COMPOSITION, HIGH DIELECTRIC CONSTANT GATE INSULATOR Public/Granted day:2011-06-02
Information query
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