Invention Grant
- Patent Title: Phosphor coating method for fabricating light emitting semiconductor device and applications thereof
- Patent Title (中): 用于制造发光半导体器件的荧光体涂覆方法及其应用
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Application No.: US13430663Application Date: 2012-03-26
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Publication No.: US08258535B2Publication Date: 2012-09-04
- Inventor: Tzu-Hao Chao
- Applicant: Tzu-Hao Chao
- Applicant Address: TW New Taipei
- Assignee: Everlight Electronics Co., Ltd.
- Current Assignee: Everlight Electronics Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Han IP Law PLLC
- Agent Andy M. Han
- Priority: TW96132098A 20070829
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.
Public/Granted literature
- US20120181564A1 Phosphor Coating Method for Fabricating Light Emitting Semiconductor Device and Applications Thereof Public/Granted day:2012-07-19
Information query
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