Invention Grant
- Patent Title: Image sensor and method of manufacturing the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US12553638Application Date: 2009-09-03
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Publication No.: US08258558B2Publication Date: 2012-09-04
- Inventor: Tae Gyu Kim
- Applicant: Tae Gyu Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2008-0089690 20080911
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113

Abstract:
Provided are image sensors and methods of manufacturing the same. An image sensor includes a metal line and an interlayer insulation layer on a semiconductor substrate including a readout circuit; an image detection unit on the interlayer insulation layer and including stacked first and second doping layers; a pixel separation unit penetrating the image detection unit, separating the image detection unit by pixel; a first metal contact penetrating the image detection unit and the interlayer insulation layer to contact the metal line; a first barrier pattern protecting the first metal contact from contacting the second doping layer, while exposing the first metal contact to the first doping layer; and a second metal contact in a trench above the first metal contact, wherein the second metal contact is electrically connected to the second doping layer while being isolated from the first metal contact by a second barrier pattern.
Public/Granted literature
- US20100059846A1 IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-03-11
Information query
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