Invention Grant
- Patent Title: Semiconductor decoupling capacitor device
- Patent Title (中): 半导体去耦电容器件
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Application No.: US12656888Application Date: 2010-02-18
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Publication No.: US08258574B2Publication Date: 2012-09-04
- Inventor: Dong-hyun Han
- Applicant: Dong-hyun Han
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0014423 20090220
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/00

Abstract:
A semiconductor device including a plurality of decoupling capacitors formed on a semiconductor substrate, and a plurality of decoupling capacitor contact plugs disposed between the semiconductor substrate and the plurality of decoupling capacitors, the plurality of decoupling capacitor contact plugs being electrically connected to the plurality of decoupling capacitors and including an array of first decoupling capacitor contact plugs and second decoupling capacitor contact plugs.
Public/Granted literature
- US20100213573A1 Semiconductor device Public/Granted day:2010-08-26
Information query
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