Invention Grant
- Patent Title: CMOS inverter device with fin structures
- Patent Title (中): 具有鳍结构的CMOS逆变器器件
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Application No.: US12478222Application Date: 2009-06-04
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Publication No.: US08258577B2Publication Date: 2012-09-04
- Inventor: Abhisek Dixit
- Applicant: Abhisek Dixit
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Patterson & Sheridan LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/118 ; H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L21/425 ; G11C11/00
Abstract:
A CMOS inverter formed with narrowly spaced fins structures including transistors formed on sidewalls of each fin structure. A high-k dielectric material is deposited on the fins to provide mechanical stability to the fins and serve as a gate dielectric material. A mid gap metal gate layer may be formed on the high-k dielectric layer.
Public/Granted literature
- US20100308414A1 CMOS INVERTER DEVICE Public/Granted day:2010-12-09
Information query
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