An image sensor and a method of manufacturing the same. An image sensor may include a first interlayer dielectric layer having a first metal wiring and/or a bonding silicon including impurity regions on and/or over a first interlayer dielectric layer. An image sensor may include a second interlayer dielectric layer formed on and/or over a bonding silicon, and/or a first contact plug connected to a first metal wiring. An image sensor may include a third interlayer dielectric layer on and/or over a second interlayer dielectric layer, a second contact plug connected to a first impurity region and/or a second metal wiring on and/or over a second interlayer dielectric layer. An image sensor may include and a color filter layer and/or a microlens. A dielectric layer may be between a first contact plug and a first impurity region. A dielectric layer may be on and/or over a second interlayer dielectric layer.