Invention Grant
- Patent Title: Stacked photoelectric conversion device and method for producing the same
- Patent Title (中): 叠层光电转换装置及其制造方法
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Application No.: US12523633Application Date: 2007-11-15
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Publication No.: US08258596B2Publication Date: 2012-09-04
- Inventor: Yoshiyuki Nasuno , Noriyoshi Kohama , Takanori Nakano
- Applicant: Yoshiyuki Nasuno , Noriyoshi Kohama , Takanori Nakano
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2007-012851 20070123
- International Application: PCT/JP2007/072207 WO 20071115
- International Announcement: WO2008/090666 WO 20080731
- Main IPC: H01L31/103
- IPC: H01L31/103 ; H01L21/329
Abstract:
To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.
Public/Granted literature
- US20100059847A1 STACKED PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2010-03-11
Information query
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