Power semiconductor device

Invention Grant

US08258601B2 Power semiconductor device 有权

Title translation: 功率半导体器件

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Patent Title: Power semiconductor device
Patent Title (中): 功率半导体器件
Application No.: US12395946

Application Date: 2009-03-02
Publication No.: US08258601B2

Publication Date: 2012-09-04
Inventor: Hiroshi Yamaguchi
Applicant: Hiroshi Yamaguchi
Applicant Address: JP
Assignee: Mitsubishi Electric Corporation
Current Assignee: Mitsubishi Electric Corporation
Current Assignee Address: JP
Agency: Studebaker & Brackett PC
Agent Donald R. Studebaker; John F. Guay
Priority: JP2008-132151 20080520; JP2008-239098 20080918
Main IPC: H01L29/10
IPC: H01L29/10

Abstract:

A plurality of cell structures of a vertical power device are formed at a semiconductor substrate. One cell structure included in the plurality of cell structures and located in a central portion CR of the main surface has a lower current carrying ability than the other cell structure included in the plurality of cell structures and located in an outer peripheral portion PR of the main surface. This provides a power semiconductor device having a long power cycle life.

Abstract(Chinese):

在半导体衬底上形成垂直功率器件的多个单元结构。包含在多个单元结构中并且位于主表面的中心部分CR中的一个单元结构具有比包括在多个单元结构中的其它单元结构更低的载流能力，并且位于主单元结构的外周部分PR中表面。这提供了具有长功率循环寿命的功率半导体器件。

Public/Granted literature

US20090289277A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2009-11-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/10	...具有连接到1个不通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的