Invention Grant
- Patent Title: Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal
- Patent Title (中): 固态高亮度远紫外发光元件包括高纯度六方氮化硼单晶
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Application No.: US12588462Application Date: 2009-10-16
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Publication No.: US08258603B2Publication Date: 2012-09-04
- Inventor: Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
- Applicant: Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
- Applicant Address: JP Tsukuba-Shi
- Assignee: National Institute for Materials Science
- Current Assignee: National Institute for Materials Science
- Current Assignee Address: JP Tsukuba-Shi
- Agent Manabu Kanesaka
- Priority: JP2003-388467 20031118; JP2004-035501 20040212; JP2004-260480 20040908
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
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