Invention Grant
US08258617B2 Semiconductor device, semiconductor package, interposer, semiconductor device manufacturing method and interposer manufacturing method
失效
半导体器件,半导体封装,插入器,半导体器件制造方法和插入件制造方法
- Patent Title: Semiconductor device, semiconductor package, interposer, semiconductor device manufacturing method and interposer manufacturing method
- Patent Title (中): 半导体器件,半导体封装,插入器,半导体器件制造方法和插入件制造方法
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Application No.: US12929665Application Date: 2011-02-07
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Publication No.: US08258617B2Publication Date: 2012-09-04
- Inventor: Koujirou Shibuya
- Applicant: Koujirou Shibuya
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-030438 20100215
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48

Abstract:
A technique which prevents cracking in a solder resist layer covering an interposer surface between external coupling terminals of an interconnection substrate, thereby reducing the possibility of interconnect wire disconnection resulting from such cracking. A semiconductor package is mounted over an interconnection substrate. An underfill resin layer seals the space between the semiconductor package and the interconnection substrate. External coupling terminals, interconnect wires and a solder resist layer are formed over the surface of an interposer (constituent of the semiconductor package) where the semiconductor chip is not mounted. In an area where an interconnect wire passing between two neighboring ones of the external coupling terminals intersects with a line connecting the centers of the two external coupling terminals, the interconnect wire is not covered by the solder resist layer.
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