Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US12577376Application Date: 2009-10-12
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Publication No.: US08258618B2Publication Date: 2012-09-04
- Inventor: Yoshiko Obiraki , Seiji Oka , Takeshi Oi
- Applicant: Yoshiko Obiraki , Seiji Oka , Takeshi Oi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-301065 20081126
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
The power semiconductor module includes: a circuit substrate; power semiconductor elements joined to element mounting portions of the wiring pattern on the circuit substrate; the cylindrical external terminal communication section joined to the wiring pattern; circuit forming means for connecting between portions that require electrical connection therebetween; and transfer molding resin for sealing these components. The cylindrical external terminal communication section is a metal cylinder, and the cylindrical external terminal communication section has a hole filled with gel.
Public/Granted literature
- US20100127389A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2010-05-27
Information query
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