Invention Grant
US08258752B2 Integrated PMOS transistor and Schottky diode and charging switch circuit employing the integrated device
有权
集成PMOS晶体管和肖特基二极管和充电开关电路采用集成器件
- Patent Title: Integrated PMOS transistor and Schottky diode and charging switch circuit employing the integrated device
- Patent Title (中): 集成PMOS晶体管和肖特基二极管和充电开关电路采用集成器件
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Application No.: US12629956Application Date: 2009-12-03
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Publication No.: US08258752B2Publication Date: 2012-09-04
- Inventor: Kuo-Chin Chiu , Chih-Feng Huang
- Applicant: Kuo-Chin Chiu , Chih-Feng Huang
- Applicant Address: KY Grand Cayman, British Indian Ocean Territories TW Hsin-Chu
- Assignee: Richpower Microelectronics Corporation,Richtek Technology Corporation, R.O.C.
- Current Assignee: Richpower Microelectronics Corporation,Richtek Technology Corporation, R.O.C.
- Current Assignee Address: KY Grand Cayman, British Indian Ocean Territories TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H02J7/00
- IPC: H02J7/00 ; H02J7/04 ; H02J7/16
Abstract:
The present invention discloses an integrated PMOS transistor and Schottky diode, comprising a PMOS transistor which includes a gate, a source, a drain and a channel region between the source and drain, wherein the source, drain and channel region are formed in a substrate, and a parasitic diode is formed between the drain and the channel region; and a Schottky diode formed in the substrate and connected in reverse series with the parasitic diode, the Schottky diode having one end connected with the parasitic diode and the other end connected with the source.
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