Invention Grant
US08258812B2 Software programmable logic using spin transfer torque magnetoresistive devices
有权
使用自旋传输转矩磁阻器件的软件可编程逻辑
- Patent Title: Software programmable logic using spin transfer torque magnetoresistive devices
- Patent Title (中): 使用自旋传输转矩磁阻器件的软件可编程逻辑
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Application No.: US13079068Application Date: 2011-04-04
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Publication No.: US08258812B2Publication Date: 2012-09-04
- Inventor: Lew Chua-Eoan , Matthew Nowak , Seung Kang
- Applicant: Lew Chua-Eoan , Matthew Nowak , Seung Kang
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G06F7/38
- IPC: G06F7/38 ; H03K19/177
Abstract:
Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.
Public/Granted literature
- US20110254587A1 Software Programmable Logic Using Spin Transfer Torque Magnetoresistive Devices Public/Granted day:2011-10-20
Information query
