Invention Grant
- Patent Title: Power switch circuit and semiconductor integrated circuit device
- Patent Title (中): 电源开关电路和半导体集成电路器件
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Application No.: US12561046Application Date: 2009-09-16
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Publication No.: US08258829B2Publication Date: 2012-09-04
- Inventor: Masaki Komaki
- Applicant: Masaki Komaki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: H03L7/00
- IPC: H03L7/00
Abstract:
A power switch circuit that ensures suppression of an increase in a transient current. The power switch circuit includes a first transistor, which generates an output voltage in response to a control signal, and a time difference generation circuit, which delays the control signal by performing a logical process with the output voltage of the first transistor and the control signal.
Public/Granted literature
- US20100001782A1 POWER SWITCH CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2010-01-07
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