An electrooptic device includes first insulating layer between a semiconductor layer of a transistor and scanning line. The first insulating layer has a contact hole for electrically connecting the gate electrode and the scanning line, the contact hole having a first portion located beside the semiconductor layer of the corresponding transistor in plan view and that extends in the direction in which one of the scanning lines or the data lines extend and a second portion that overlaps with part of the corresponding data line and that extends in a direction in which the other of the scanning lines data lines extend.