Invention Grant
- Patent Title: Multilayer structures having memory elements with varied resistance of switching layers
- Patent Title (中): 具有开关层电阻变化的记忆元件的多层结构
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Application No.: US12873084Application Date: 2010-08-31
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Publication No.: US08259485B2Publication Date: 2012-09-04
- Inventor: Jianhua Yang , Wei Wu , John Paul Strachan
- Applicant: Jianhua Yang , Wei Wu , John Paul Strachan
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A multilayer structure is provided that includes a base and a multilayer circuit disposed above the base. The multilayer circuit includes memory elements, each including a switching layer, and conductive lines leading from the base to the memory element. The total resistance of the switching layer of a memory element is varied based on the total resistance of conductive lines leading from the base to the memory element.
Public/Granted literature
- US20120051125A1 MULTILAYER STRUCTURES HAVING MEMORY ELEMENTS WITH VARIED RESISTANCE OF SWITCHING LAYERS Public/Granted day:2012-03-01
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