Invention Grant
US08259518B2 Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET
有权
基于纳米电流分压器的低压和低功率存储单元控制低电压感测MOSFET
- Patent Title: Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET
- Patent Title (中): 基于纳米电流分压器的低压和低功率存储单元控制低电压感测MOSFET
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Application No.: US12796031Application Date: 2010-06-08
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Publication No.: US08259518B2Publication Date: 2012-09-04
- Inventor: Jack Z. Peng , David Fong
- Applicant: Jack Z. Peng , David Fong
- Applicant Address: CN Mian Yang, Sichuan
- Assignee: Sichuan Kiloway Electronics Inc.
- Current Assignee: Sichuan Kiloway Electronics Inc.
- Current Assignee Address: CN Mian Yang, Sichuan
- Agency: Schein & Cai LLP
- Agent Jingming Cai
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory cell has at least two word lines and at least two bit lines. The cell also has a first select device being connected to at least one word line and one bit line and a gate capacitor element connected to at least one word line and the first select device. The cell also has a sense device being connected in series to the gate capacitor element and the first select device. The sense device is connected to at least two bit lines.
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