Invention Grant
US08259518B2 Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET 有权
基于纳米电流分压器的低压和低功率存储单元控制低电压感测MOSFET

Low voltage and low power memory cell based on nano current voltage divider controlled low voltage sense MOSFET
Abstract:
A memory cell has at least two word lines and at least two bit lines. The cell also has a first select device being connected to at least one word line and one bit line and a gate capacitor element connected to at least one word line and the first select device. The cell also has a sense device being connected in series to the gate capacitor element and the first select device. The sense device is connected to at least two bit lines.
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