Invention Grant
- Patent Title: High-voltage power supply
- Patent Title (中): 高压电源
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Application No.: US12406160Application Date: 2009-03-18
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Publication No.: US08260167B2Publication Date: 2012-09-04
- Inventor: Chul-woo Oh , Joong-gi Kwon
- Applicant: Chul-woo Oh , Joong-gi Kwon
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Staas & Halsey LLP
- Priority: KR2008-72444 20080724
- Main IPC: G03G15/00
- IPC: G03G15/00

Abstract:
Provided is a high-voltage power supply including a board having at least one bent portion separating a first region of the board from a second region of the board, the first region not being coplanar with the second region of the board; a first circuit, on the first region of the board, generating a second voltage according to a first voltage; and a second circuit, on the second region of the board, amplifying the second voltage and then rectifying the amplified second voltage.
Public/Granted literature
- US20100020510A1 HIGH-VOLTAGE POWER SUPPLY Public/Granted day:2010-01-28
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